Bis(methyl-η5−cyclopentadienyl)dimethylhafnium
Bis(methyl-η5−cyclopentadienyl)dimethylhafnium (CAS: 68193-43-1), with the molecular formula Hf[C5H4(CH3)]2(CH3)2 and a molecular weight of 366.80 g/mol, is a waxy solid hafnium precursor. It is primarily utilised as an advanced precursor for atomic layer deposition (ALD) and chemical vapour deposition (CVD) of hafnium dioxide (HfO2) thin films. These HfO2 films are crucial in advanced semiconductor manufacturing for gate dielectrics and in energy applications.
- IUPAC
- HFCMME,HfD-CO2
![Bis(methyl-η5−cyclopentadienyl)dimethylhafnium (Hf[C5H4(CH3)]2(CH3)2) — chemical structure, CAS 68193-43-1; Materials Science, fine chemical supplied by Tech Serve Solutions](/_next/image?url=https%3A%2F%2Fpub-f4d920c906024441a773a96f7098e551.r2.dev%2Fimages%2Fproducts%2F68193-43-1.png&w=3840&q=75)
Atomic Layer Deposition (ALD)
Serves as a high-purity precursor for the deposition of hafnium dioxide (HfO2) thin films via ALD. These films are essential for advanced semiconductor gate dielectrics.
Chemical Vapour Deposition (CVD)
Utilised in CVD processes for depositing HfO2 thin films, offering excellent insulating dielectric properties for microelectronic and energy storage devices.
Gate Oxide Replacement
HfO2 derived from this precursor is a leading candidate to replace silicon dioxide as the gate oxide in semiconductor devices due to its superior dielectric properties.
Insulating Dielectrics
Its application extends to creating insulating dielectric layers for capacitive elements within memory devices, such as DRAM, due to the favourable properties of HfO2.
| Molecular weight | 366.80 |
|---|---|
| Linear formula | Hf[C5H4(CH3)]2(CH3)2 |
| Form | waxy solid |
| Colour | white |
| Boiling point | 80-120 °C/0.3-0.5 mmHg(lit.) |
| Density | 1.60 g/mL±0.01 g/mL at 25 °C |
| Application | Advanced precursor for atomic layer deposition of HfO2 thin films. Hafnium and zirconium oxides are leading candidates to replace silicion dioxide as the gate oxide in a variety of semiconductor and energy applications.1 Excellent properties of HfO2 and ZrO2 films make them especially attractive for gate oxide replacement and as potential insulating dielectrics for capacitive elements in memory devices such as DRAM.2 |
| Melting point | 60 °C(lit.) |
Hazard statements
- H315Causes skin irritation
- H319Causes serious eye irritation
- H335May cause respiratory irritation
Precautionary statements
- P261Avoid breathing dust, fume, gas or vapours
- P305IF IN EYES
| Water hazard class (WGK, DE) | 3 |
|---|---|
| Hazard codes (EU) | Xi |
| Risk statements (R) | 36/37/38 |
| Safety statements (S) | 24/25-26-36/37/39 |
Hazard information is provided for guidance. Always consult the product Safety Data Sheet (SDS), available on request, before handling.
Documentation
Every batch ships with a Certificate of Analysis covering assay, identity and purity; the grade is confirmed against your enquiry. Safety Data Sheets and technical data sheets are available on request.
Supply & logistics
Samples for technical evaluation; bulk MOQ by grade and packaging. In-stock material ships in 7–10 working days, worldwide, with full export documentation.
What is Bis(methyl-η5−cyclopentadienyl)dimethylhafnium used for?
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Bis(methyl-η5−cyclopentadienyl)dimethylhafnium is primarily used as an advanced precursor for the atomic layer deposition (ALD) and chemical vapour deposition (CVD) of hafnium dioxide (HfO2) thin films, crucial for advanced semiconductor gate dielectrics and energy applications.
What is the CAS number and chemical formula for Bis(methyl-η5−cyclopentadienyl)dimethylhafnium?
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The CAS number is 68193-43-1, and the chemical formula is Hf[C5H4(CH3)]2(CH3)2.
What grade and purity does Tech Serve Solutions supply?
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Tech Serve Solutions supplies Bis(methyl-η5−cyclopentadienyl)dimethylhafnium at a purity of 99.9% (metals basis) as confirmed by trace metal analysis. TSS does not represent this product as USP, BP, EP, or other pharmacopoeia grades.
How should Bis(methyl-η5−cyclopentadienyl)dimethylhafnium be handled safely?
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This compound is classified as a warning. It causes skin irritation (H315), serious eye irritation (H319), and may cause respiratory irritation (H335). Handle with appropriate personal protective equipment, including gloves, eye protection, and ensure adequate ventilation. Avoid breathing dust/fume/gas/mist/vapours/spray. In case of contact with eyes, rinse cautiously with water for several minutes, removing contact lenses if present and easy to do. Continue rinsing.
Is Bis(methyl-η5−cyclopentadienyl)dimethylhafnium suitable for microelectronics?
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Yes, Bis(methyl-η5−cyclopentadienyl)dimethylhafnium is an advanced precursor specifically used in microelectronics for the deposition of hafnium dioxide gate dielectrics via ALD and CVD.
How is this chemical shipped and exported?
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Tech Serve Solutions, established in 1998, is a specialist global supplier and exporter of fine chemicals. We handle packaging and export of Bis(methyl-η5−cyclopentadienyl)dimethylhafnium in compliance with international shipping regulations.
How can I request a quote or sample?
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To request a quote or sample of Bis(methyl-η5−cyclopentadienyl)dimethylhafnium, please contact our sales team through the Tech Serve Solutions website or by calling our main office.
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